IRFR3411 irfu3411 hexfet ? power mosfet 02/18/02 parameter typ. max. units r jc junction-to-case ??? 1.2 r ja junction-to-ambient (pcb mount)* ??? 50 c/w r ja junction-to-ambient ??? 110 thermal resistance www.irf.com 1 v dss = 100v r ds(on) = 44m ? i d = 32a s d g advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead, i-pak, version (irfu series) is for through- hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. advanced process technology ultra low on-resistance dynamic dv/dt rating 175 c operating temperature fast switching fully avalanche rated description absolute maximum ratings parameter max. units i d @ t c = 25 c continuous drain current, v gs @ 10v 32 i d @ t c = 100 c continuous drain current, v gs @ 10v 23 a i dm pulsed drain current 110 p d @t c = 25 c power dissipation 130 w linear derating factor 0.83 w/ c v gs gate-to-source voltage 20 v i ar avalanche current 16 a e ar repetitive avalanche energy 13 mj dv/dt peak diode recovery dv/dt 7.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c pd - 94393 d-pak IRFR3411 i-pak irfu3411
IRFR3411/irfu3411 2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25 c, i s = 16a, v gs = 0v t rr reverse recovery time ??? 115 170 ns t j = 25 c, i f = 16a q rr reverse recovery charge ??? 505 760 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 33 110 a repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) starting t j = 25 c, l =1.5mh r g = 25 ? , i as = 16a. (see figure 12) i sd 16 a, di/dt 340a/s, v dd v (br)dss , t j 175 c. pulse width 400s; duty cycle 2%. notes: this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175 c . * when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint dering techniques refer to application note #an-994. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? vv gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.12 ??? v/ c reference to 25 c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 36 44 m ? v gs = 10v, i d = 16a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 21 ??? ??? sv ds = 50v, i d = 16a ??? ??? 25 a v ds = 100v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 150 c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? 48 71 i d = 16a q gs gate-to-source charge ??? 9.0 14 nc v ds = 80v q gd gate-to-drain ("miller") charge ??? 14 21 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 11 ??? v dd = 50v t r rise time ??? 35 ??? i d = 16a t d(off) turn-off delay time ??? 39 ??? r g = 5.1 ? t f fall time ??? 35 ??? v gs = 10v, see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 1960 ??? v gs = 0v c oss output capacitance ??? 250 ??? v ds = 25v c rss reverse transfer capacitance ??? 40 ??? pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ??? 700 185 mj i as = 16a, l = 1.5mh nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current
IRFR3411/irfu3411 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 33a 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 v = 50v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j
IRFR3411/irfu3411 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 500 1000 1500 2000 2500 3000 v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 0 20 40 60 80 0 4 8 12 16 20 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 16a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) t a = 25 c t j = 175 c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
IRFR3411/irfu3411 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds 90% 10% v gs t d(on) t r t d(off) t f v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 10a. switching time test circuit fig 10b. switching time waveforms 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 t , case temperature ( c ) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRFR3411/irfu3411 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v gs fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 100 200 300 400 startin g t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 6.5a 11.3a 16a
IRFR3411/irfu3411 www.irf.com 7 peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - r g v dd ? dv/dt controlled by r g ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t * circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer * reverse polarity of d.u.t for p-channel v gs [ ] [ ] *** v gs = 5.0v for logic level and 3v drive devices [ ] *** fig 14. for n-channel hexfet ? power mosfets
IRFR3411/irfu3411 8 www.irf.com d-pak (to-252aa) package outline dimensions are shown in millimeters (inches) d-pak (to-252aa) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) m in . 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 d imension ing & tolerancin g per ansi y 14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s t o je d e c o u t lin e t o -252 a a . 4 dimensions show n are before solder dip, sold er d ip max. +0.16 (.006). irf u120 916a lot code assembly example: wi t h as s e mb l y this is an irfr120 year 9 = 1999 dat e code line a we e k 16 in the assembly line "a" as s embled on ww 16, 1999 lot code 1234 part number international logo rectifier 34 12
IRFR3411/irfu3411 www.irf.com 9 i-pak (to-251aa) package outline dimensions are shown in millimeters (inches) i-pak (to-251aa) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010 ) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r ms to je d e c o u t lin e to -25 2a a . 4 d im e n s io n s s h o w n a r e b e f o r e s o l d e r d ip , solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018) we e k 19 line a ye ar 9 = 1999 dat e code part number in the assembly line "a" as s embled on ww 19, 1999 lot code 5678 rectifier logo international assembly lot code 56 78 example: with assembly t his is an irfr120 irf u120 919a
IRFR3411/irfu3411 10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the automotive [q101] market. qualification standards can be found on ir ? s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/02 d-pak (to-252aa) tape & reel information dimensions are shown in millimeters (inches) tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inc h
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